Download PDFOpen PDF in browserExploring Electrical and Thermal Properties of Surrounding Gate FETs and FinFET Transistors: Insights from Simulation and ExperimentationEasyChair Preprint no. 130814 pages•Date: April 25, 2024AbstractSurrounding Gate FETs and FinFET transistors are interesting options for semiconductor technology, and this study looks into their electrical and thermal properties. We have produced encouraging simulation findings that agree well with both experimental and numerical data, using an electrothermal model that integrates the new Stephan-Boltzmann model, the enhanced Ballistic-Diffusive model, and the enhanced Drift-Diffusion model. Further examination of the Surrounding Gate FET indicates the appearance of phonon radiation effects when the channel length is reduced to 10 nm. Keyphrases: electrical and thermal behavior, electrothermal model, FET Surrounding Gate, FinFET transistors, radiation effect
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